IS61WV51216EDALL Datasheet, PDF (4/19 Pages) Integrated Silicon Solution, Inc – TTL compatible inputs and outputs

IS61WV51216EDALL
IS61/64WV51216EDBLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read

Write

I/O PIN
WE CE OE LB UB
I/O0-I/O7
I/O8-I/O15 Vdd Current
XHXXX
High-Z
High-Z
Isb1, Isb2
HLHXX
X
L
X
H
H
High-Z
High-Z
Icc
High-Z
High-Z
H
L
L
L
H
Dout
High-Z Icc
H
L
L
H
L
High-Z
Dout
H
L
L
L
L Dout Dout
L
L
X
L
H
Din
High-Z Icc
L
L
X
H
L
High-Z
Din
L
L
X
L
L Din Din
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
Vterm Terminal Voltage with Respect to GND –0.5 to Vdd + 0.5 V
Vdd
Vdd Relates to GND
–0.3 to 4.0
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
Cin
Input Capacitance
Vin = 0V
6
C_I/O
Input/Output Capacitance
Vout = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
Unit
pF
pF
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
02/20/2013