IS61WV2568EDBLL Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

IS61/64WV2568EDBLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 3.3V + 10%
Symbol Parameter
Test Conditions
Min.
Voh
Output HIGH Voltage
Vdd = Min., Ioh = –4.0 mA
2.4
Vol
Output LOW Voltage
Vdd = Min., Iol = 8.0 mA
—
Vih
Input HIGH Voltage
2
Vil
Input LOW Voltage⁽¹⁾
–0.3
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
–1
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled
–1
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Max.
—
0.4
Vdd + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.4V-3.6V
Symbol Parameter
Test Conditions
Min.
Voh
Output HIGH Voltage
Vdd = Min., Ioh = –1.0 mA
1.8
Vol
Output LOW Voltage
Vdd = Min., Iol = 1.0 mA
—
Vih
Input HIGH Voltage
2.0
Vil
Input LOW Voltage⁽¹⁾
–0.3
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
–1
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd, Outputs Disabled
–1
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
Max.
—
0.4
Vdd + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
-8 -10 -20
Symbol Parameter
Test Conditions Min. Max. Min. Max. Min. Max. Unit
Icc
Vdd Dynamic Operating Vdd = Max.,
Com. — 40
— 30
— 25 mA
Supply Current
Iout = 0 mA, f = fmax Ind. — 45
— 35
— 30
Auto. — —
— 50
— 45
typ.⁽²⁾
21
21
Icc1 Operating
Supply Current
Vdd = Max.,
Iout = 0 mA, f = 0
Com. — 20
Ind. — 25
Auto. — —
— 20
— 25
— 40
— 20 mA
— 25
— 40
Isb1
TTL Standby Current Vdd = Max.,
(TTL Inputs)
Vin = Vih or Vil
CE ≥ Vih, f = 0
Com. — 10
Ind. — 15
Auto. — —
— 10
— 15
— 30
— 10 mA
— 15
— 30
Isb2
CMOS Standby
Vdd = Max.,
Com. — 5
Current (CMOS Inputs) CE ≥ Vdd – 0.2V,
Ind. — 6
Vin ≥ Vdd – 0.2V, or Auto. — —
Vin ≤ 0.2V, f = 0 typ.⁽²⁾
1.5
—5
—6
— 15
1.5
—5
mA
—6
— 15
Note:
1.At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
11/08/2011