IS61LV5128AL Datasheet, PDF (4/13 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV5128AL
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
VOH
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
Test Conditions
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2.0 VDD + 0.3
V
–0.3
0.8
V
–2
2
µA
–5
5
–2
2
µA
–5
5
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
ICC
VDD Dynamic Operating
Supply Current
ISB
TTL Standby Current
(TTL Inputs)
ISB1
TTL Standby Current
(TTL Inputs)
ISB2
CMOS Standby
Current (CMOS Inputs)
Test Conditions
VDD = Max.,
Com.
IOUT = 0 mA, f = fMAX Ind.
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = fMAX.
Com.
Ind.
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
Ind.
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
-10
-12
Min. Max. Min. Max. Unit
— 90
— 85
mA
— 95
— 90
— 40
— 35
mA
— 45
— 40
— 20
— 20
mA
— 25
— 25
— 15
— 15
mA
— 20
— 20
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
04/15/05