IS61LV5128AL Datasheet, PDF (3/13 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV5128AL
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to VDD + 0.5 V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
ISSI ^®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
10ns
3.3V +10%, -5%
3.3V +10%, -5%
12ns
3.3V +10%
3.3V +10%
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
CIN
Input Capacitance
VIN = 0V
6
CI/O
Input/Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Unit
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. C
04/15/05