IS61LV12816L Datasheet, PDF (4/16 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV12816L
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VDD
Power Supply Voltage Relative to GND
–0.5 to 4.0V
V
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
TSTG
Storage Temperature
–65 to + 150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
VDD (8 nS)
3.3V + 10%, -5%
3.3V + 10%, -5%
VDD (10 nS)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
2.4
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
—
VIH
Input HIGH Voltage⁽¹⁾
2
VIL
Input LOW Voltage⁽¹⁾
–0.3
ILI
Input Leakage
GND ≤ VIN ≤ VDD
–1
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
–1
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Max.
—
0.4
VDD + 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05