IS61LV12816L Datasheet, PDF (12/16 Pages) Integrated Silicon Solution, Inc – 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV12816L
ISSI ^®
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
VDR
IDR
Parameter
VDD for Data Retention
Data Retention Current
Test Condition
See Data Retention Waveform
VDD = 2.0V, CE ≥ VDD – 0.2V
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
Note 1: Typical values are measured at VDD = 3.3V, TA = 25^OC. Not 100% tested.
Options
Com.
Ind.
Min.
Typ.⁽¹⁾ Max. Unit
2.0
—
3.6 V
—
0.7
3 mA
—
—
4
0
—
— ns
tRC
—
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/27/05