IS63WV1288DALL Datasheet, PDF (3/20 Pages) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM

IS63WV1288DALL/DALS
IS63WV1288DBLL/DBLS
IS64WV1288DBLL/DBLS
TRUTH TABLE
Mode
WE
CE
OE
Not Selected
X
H
X
(Power-down)
Output Disabled
H
L
H
Read
H
L
L
Write
L
L
X
I/O Operation
High-Z
High-Z
Dout
Din
Vdd Current
Isb1, Isb2
Icc1, Icc2
Icc1, Icc2
Icc1, Icc2
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
Vterm
Terminal Voltage with Respect to GND
–0.5 to Vdd+0.5
V
Tstg
Storage Temperature
–65 to +150
°C
Pt
Power Dissipation
1.5
W
Vdd
Vdd Related to GND
-0.2 to +3.9
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Integrated Silicon Solution, Inc. — www.issi.com
3
Rev. B
12/15/2011