IS62LV5128LL Datasheet, PDF (3/10 Pages) Integrated Silicon Solution, Inc – 512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV5128LL
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.3 V
VCC
Vcc related to GND
–0.3 to +3.3
V
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
ISSI ^®
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
CIN
Input Capacitance
VIN = 0V
6
COUT
Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
Unit
pF
pF
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage VCC = 3.0V, IOH = –1.0 mA
VOL
Output LOW Voltage VCC = 3.0V, IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, OUTPUTS Disabled
Note:
1. VIL = –2.0V for pulse width less than 10 ns.
Min.
2.2
—
2.2
–0.2
–1
–1
Max.
—
0.4
VCC + 0.3
0.4
1
1
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. D
05/04/01