IS62C256 Datasheet, PDF (3/8 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW POWER CMOS STATIC RAM

IS62C256
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
5V ± 10%
5V ± 10%
DC ELECTRICAL CHARACTERISTICS
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
Test Conditions
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
GND ≤ VIN ≤ VCC
ILO Output Leakage
GND ≤ VOUT ≤ VCC,
Outputs Disabled
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
ISSI ^®
Com.
Ind.
Com.
Ind.
Min.
2.4
—
2.2
–0.3
–2
–10
–2
–10
Max.
Unit
—
V
0.4
V
VCC + 0.5 V
0.8
V
2
µA
10
2
µA
10
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
ICC1
ICC2
ISB1
ISB2
Parameter
Vcc Operating
Supply Current
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
VCC = Max., CS = VIL
IOUT = 0 mA, f = 0
VCC = Max., CS = VIL
IOUT = 0 mA, f = fMAX
VCC = Max.,
VIN = VIH or VIL
CS ≥ VIH, f = 0
VCC = Max.,
CS ≥ VCC – 0.2V,
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
-45 ns
-70 ns
Min. Max. Min. Max. Unit
Com. — 60
Ind.
— 70
— 60 mA
— 70
Com. — 70
Ind.
— 80
— 65 mA
— 75
Com. — 5
Ind.
— 10
—5
mA
— 10
Com. — 0.5
Ind.
— 1.0
— 0.5 mA
— 1.0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
8
pF
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
SR072-1E
05/12/99