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IS61QDB41M36 Datasheet, PDF (17/28 Pages) Integrated Silicon Solution, Inc – 36 Mb (1M x 36 & 2M x 18) QUAD (Burst of 4) Synchronous SRAMs
36 Mb (1M x 36 & 2M x 18)
QUAD (Burst of 4) Synchronous SRAMs
ISSI ®
AC Characteristics (TA = 0 to +70oC, VDD = 1.8V -5%, +5%)
Parameter
Symbol
50
(200MHz)
Min Max
Clock
Cycle time (K, K, C, C)
tKHKH 5.0
Clock phase jitter (K, K, C, C)
tKC-VAR
Clock high pulse (K, K, C, C)
tKHKL 2.0
Clock low pulse (K, K, C, C)
tKLKH 2.0
Clock to clock (KH>KH, CH>CH)
tKHKH 2.2
Clock to data clock (KH>CH, KH>CH) tKHCH 0.0
DLL lock (K, C)
tKC-lock 1024
K static to DLL reset
tKC-reset 30
Output Times
7.5
0.2
2.75
2.3
C, C high to output valid
C, C high to output hold
C, C high to echo clock valid
C, C high to echo clock hold
CQ, CQ High to output valid
CQ, CQ high to output hold
C High to output high-Z
C High to output low-Z
Setup Times
tCHQV
tCHQX
tCHCQV
tCHCQX
tCQHQV
tCQHQX
tCHQZ
tCHQX1
-0.38
-0.36
-0.4
-0.38
0.38
0.36
0.38
0.38
Address valid to K, K rising edge
tAVKH
0.4
—
Control inputs valid to K rising edge tIVKH
0.4
—
Data-in valid to K, K rising edge
tDVKH
0.4
—
Hold Times
K rising edge to address hold
tKHAX
0.4
—
K rising edge to control inputs hold
tKHIX
0.4
—
K, K rising edge to data-in hold
tKHDX
0.4
—
Units Notes
ns
ns
ns
ns
ns
ns
cycle
cycle
ns 1, 3
ns 1, 3
ns
3
ns
3
ns 1, 3
ns 1, 3
ns 1, 3
ns 1, 3
ns
2
ns
2
ns
2
ns
2
ns
2
ns
2
1. See AC Test Loading on page 16.
2. During normal operation, VIH, VIL, TRISE, and TFALL of inputs must be within 20% of VIH, VIL, TRISE, and TFALL of clock.
3. If C, C are tied high, then K, K become the references for C, C timing parameters.
18
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/09/04