IS62WV25616DBLL-45TLI Datasheet, PDF (14/17 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS62WV25616DALL/DBLL, IS65WV25616DBLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition Min. Max.
Unit
Vdr
Idr
Vdd for Data Retention
Data Retention Current
See Data Retention Waveform
Vdd = 1.2V, CS1 ≥ Vdd – 0.2V

1.2
3.6
V
Com. —
3
µA
Ind. —
7
Auto. —
20
typ.⁽¹⁾ 1
tsdr
Data Retention Setup Time See Data Retention Waveform
0 — ns
trdr
Recovery Time
See Data Retention Waveform
trc — ns
Note: 1. Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
DATA RETENTION WAVEFORM (CS1 Controlled)
VDD
tSDR
Data Retention Mode
tRDR
VDR
CS1
GND
CS1 ≥ VDD - 0.2V
DATA RETENTION WAVEFORM (CS2 Controlled)
V_DD
CE2
V_DR
0.4V
GND
Data Retention Mode
t_SDR
CS2 ≤ 0.2V
t_RDR
14
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
06/19/2013