IS61NLP12832A Datasheet, PDF (14/29 Pages) Integrated Silicon Solution, Inc – 128K x 32, 128K x 36, and 256K x 18 4Mb, PIPELINE (NO WAIT) STATE BUS SRAM

IS61NLP12832A
IS61NLP12836A/IS61NVP12836A
IS61NLP25618A/IS61NVP25618A
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
3.3V
2.5V
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
2.4
—
2.0
—
V
VOL
Output LOW Voltage
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
—
0.4
—
0.4
V
VIH⁽¹⁾
Input HIGH Voltage
2.0 VDD + 0.3
1.7 VDD + 0.3
V
VIL⁽¹⁾
Input LOW Voltage
–0.3
0.8
–0.3
0.7
V
ILI
Input Leakage Current
VSS ≤ VIN ≤ VDD⁽¹⁾
–5
5
–5
5
µA
ILO
Output Leakage Current VSS ≤ VOUT ≤ VDDQ, OE = VIH
–5
5
–5
5
µA
Note:
1. Overshoot: VIH (AC) < VDD + 2.0V (Pulse width less than tKC/2). Undershoot: VIL (AC) > -2V (Pulse width less than tKC/2).
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
Temp. range
-250
MAX
x18 x32/x36
-200
MAX
x18 x32/x36
Unit
ICC
AC Operating
Device Selected,
Com.
Supply Current
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
225 225
250 250
200 200
mA
210 210
ISB
Standby Current Device Deselected,
TTL Input
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
Ind.
90 90
100 100
90 90
mA
100 100
ISBI
Standby Current Device Deselected,
Com.
CMOS Input
VDD = Max.,
Ind.
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V typ.⁽²⁾
f=0
70 70
75 75
40
70 70
mA
75 75
ISB2
Sleep Mode
ZZ>VIH
Com.
Ind.
typ.⁽²⁾
30 30
35 35
20
30 30
mA
35 35
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
14
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. 00C
09/12/05