IS61NLF25636A Datasheet, PDF (12/37 Pages) Integrated Silicon Solution, Inc – 256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM

IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
TSTG
Storage Temperature
–65 to +150
°C
PD
Power Dissipation
1.6
W
IOUT
Output Current (per I/O)
100
mA
VIN, VOUT
Voltage Relative to VSS for I/O Pins
–0.5 to VDDQ + 0.3
V
VIN
Voltage Relative to VSS for
for Address and Control Inputs
–0.3 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance
circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE (IS61NLFx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
3.3V ± 5%
3.3V ± 5%
VDDQ
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05