IS61WV5128EDBLL-10TLI Datasheet, PDF (10/14 Pages) Integrated Silicon Solution, Inc – 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC

IS61/64WV5128EDBLL
HIGH SPEED
DATA RETENTION SWITCHING CHARACTERISTICS  (2.4V-3.6V)
Symbol Parameter
Test Condition
Options
Min.
Vdr
Vdd for Data Retention
See Data Retention Waveform
2.0
Idr
Data Retention Current
Vdd = 2.0V, CE ≥ Vdd – 0.2V
Com.
—
Ind.
—
Auto.
tsdr
Data Retention Setup Time See Data Retention Waveform
0
trdr
Recovery Time
See Data Retention Waveform
trc
Note 1: Typical values are measured at Vdd = Vdr(min), Ta = 25^oC and not 100% tested.
Typ.⁽¹⁾
—
0.5
—
—
—
Max. Unit
3.6 V
5 mA
6
15
— ns
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
10
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
11/08/2011