2SC5191 Datasheet, PDF (13/14 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 7 mA, ZO = 50Ω
Freque.
S₁₁
(MHz)
MAG
ANG
100
0.780
-33.5
200
0.639
-61.9
300
0.520
-82.6
400
0.442
-97.6
500
0.382
-112.6
600
0.346
-124.7
700
0.318
-136.6
800
0.295
-144.5
900
0.297
-156.6
1000
0.282
-164.9
1100
0.285
-170.0
1200
0.279
-177.0
1300
0.269
176.0
1400
0.295
169.7
1500
0.278
163.5
1600
0.297
161.3
1700
0.281
156.8
1800
0.318
151.6
1900
0.293
144.1
2000
0.307
144.2
S₂₁
MAG
ANG
15.604
151.8
12.605
131.6
10.059
117.5
8.162
108.4
6.855
100.9
5.848
94.6
5.125
89.5
4.525
85.3
4.059
80.8
3.730
77.0
3.414
73.7
3.152
70.5
2.945
67.1
2.762
64.6
2.572
61.2
2.427
59.6
2.331
56.8
2.194
54.5
2.073
51.3
2.009
49.7
isc RF Product Specification
2SC5191
S₁₂
MAG
ANG
0.034
75.0
0.059
62.9
0.080
59.3
0.085
56.6
0.098
55.7
0.108
56.5
0.118
57.5
0.131
57.5
0.134
55.0
0.153
56.6
0.164
58.3
0.178
56.0
0.188
55.8
0.204
57.0
0.213
54.7
0.225
53.1
0.240
53.9
0.247
52.9
0.263
52.6
0.266
51.3
S₂₂
MAG
ANG
0.889
-22.4
0.738
-37.1
0.580
-46.6
0.494
-52.5
0.427
-54.4
0.373
-55.5
0.344
-58.1
0.314
-60.2
0.290
-63.1
0.284
-62.8
0.269
-64.7
0.247
-67.7
0.234
-70.3
0.224
-70.8
0.222
-73.1
0.225
-74.4
0.212
-82.0
0.198
82.6
0.210
-82.6
0.183
-89.8
isc website：www.iscsemi.cn
13