 English |
|
|
|
|
|
|
|
| 2SC5191 Datasheet, PDF (1/14 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5191
DESCRIPTION
·Low Voltage Operation ,Low Phase Distortion
·Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
·Large Absolute Maximum Collector Current
IC = 100 mA
APPLICATIONS
·Designed for use in low-noise and small signal amplifiers
from VHF ~ UHF band.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
9
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25â
TJ
Junction Temperature
Tstg
Storage Temperature Range
6
V
2
V
100
mA
0.2
W
150
â
-65~150
â
isc websiteï¼www.iscsemi.cn
1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese