2SC5191 Datasheet, PDF (10/14 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

INCHANGE Semiconductor
isc Silicon NPN RF Transistor
VCE = 3 V, IC = 1 mA, ZO = 50Ω
Freque.
S₁₁
(MHz)
MAG
ANG
100
0.963
-15.6
200
0.935
-31.4
300
0.889
-45.5
400
0.846
-59.2
500
0.791
-71.9
600
0.734
-83.7
700
0.694
-96.2
800
0.668
-105.7
900
0.633
-117.2
1000
0.611
-127.2
1100
0.597
-135.2
1200
0.564
-143.3
1300
0.544
-151.2
1400
0.543
-159.7
1500
0.531
-165.5
1600
0.542
-173.1
1700
0.535
-178.3
1800
0.529
174.4
1900
0.515
169.5
2000
0.531
164.3
S₂₁
MAG
ANG
3.352
167.4
3.268
155.2
3.121
143.4
2.893
133.6
2.735
124.1
2.517
115.0
2.371
106.7
2.182
99.9
2.022
92.6
1.927
86.7
1.796
81.0
1.681
76.1
1.601
71.1
1.510
66.8
1.410
61.6
1.336
58.9
1.314
56.0
1.244
52.3
1.163
48.4
1.136
46.0
isc RF Product Specification
2SC5191
S₁₂
MAG
ANG
0.039
69.0
0.077
70.7
0.110
63.1
0.133
52.8
0.152
50.6
0.163
43.2
0.156
39.1
0.184
35.4
0.183
33.0
0.181
32.4
0.183
30.1
0.171
29.2
0.180
29.4
0.169
29.2
0.173
30.4
0.172
32.6
0.178
34.3
0.161
36.6
0.171
38.1
0.183
40.1
S₂₂
MAG
ANG
0.987
-7.2
0.966
-14.3
0.912
-20.7
0.872
-26.2
0.824
-30.9
0.782
-34.5
0.737
-38.5
0.689
-40.8
0.660
-45.4
0.648
-46.8
0.610
-48.9
0.590
-50.7
0.587
-53.7
0.581
-55.6
0.565
-58.4
0.552
-60.9
0.541
-63.7
0.545
-66.0
0.548
-68.1
0.530
-71.4
isc website：www.iscsemi.cn
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