IRFBA22N50APBF Datasheet, PDF (8/9 Pages) International Rectifier – HEXFET®Power MOSFET

IRFBA22N50APbF
Super-220™ ( TO-273AA ) Package Outline
11.00 [.433]
A
10.00 [.394]
1.50 [.059]
0.50 [.020]
15.00 [.590]
14.00 [.552]
123
5.00 [.196]
4.00 [.158]
4.00 [.157]
3.50 [.138]
14.50 [.570]
13.00 [.512]
2.55 [.100]
2X
3X
1.30
0.90
[.051]
[.036]
0.25 [.010] B A
4X
1.00
0.70
[.039]
[.028]
9.00 [.
B
8.00 [.
0.25 [
4
13.50 [.
12.50 [.
3.00 [.118]
2.50 [.099]
MOSFET
IGBT
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 3.4mH
R_G = 25Ω, I_AS = 24A. (See Figure 12)
ƒ I_SD ≤ 23A, di/dt ≤ 123A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
8
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