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| IRFBA22N50APBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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IRFBA22N50APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
âââ
2.0
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Max.
âââ
0.23
4.0
25
250
100
-100
Units
V
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 13.8A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
12 âââ âââ S VDS = 50V, ID = 13.8A
âââ âââ 115
ID = 23A
âââ âââ 30 nC VDS = 400V
âââ âââ 50
VGS = 10V, See Fig. 6 and 13 Â
âââ 20 âââ
VDD = 250V
âââ 66 âââ ns ID = 23A
âââ 46 âââ
RG = 4.3â¦
âââ 44 âââ
RD = 10.6â¦,See Fig. 10 Â
âââ 3400 âââ
VGS = 0V
âââ 500 âââ
VDS = 25V
âââ 17 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 4900 âââ
âââ 130 âââ
âââ 150 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
1200
24
34
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
âââ
0.50
âââ
Max.
0.37
âââ
58
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 23
A showing the
integral reverse
G
âââ âââ 92
p-n junction diode.
S
âââ âââ 1.5
âââ 500 750
âââ 6.4 9.6
V TJ = 25°C, IS = 23A, VGS = 0V Â
ns TJ = 25°C, IF = 23A
µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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