IRFBA22N50APBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET®Power MOSFET

IRFBA22N50APbF
7000
6000
5000
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
4000
3000
2000
C_iss
Coss
1000
0
1
Crss
10
100
V_DS , Drain-to-Source Voltage (V)
A
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = 23A
16
V_DS = 400V
V_DS = 250V
V_DS = 100V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80 100 120
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
T_J = 25°C
V_GS = 0 V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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