IRF9952PBF_15 Datasheet, PDF (8/10 Pages) International Rectifier – ULTRA LOW ON RESISTANCE

IRF9952PbF
P-Channel
400
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
300
C_iss
Coss
200
Crss
100
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 20. Typical Capacitance
Vs.
Drain-to-Source Voltage
20 _{ID = -2.3A}
16
V_DS =-10V
12
8
4
0
0
2
4
6
8
10
Q_G, Total Gate Charge (nC)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
PDM
1 0.01
t1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
10
100
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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