IRF9952PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – ULTRA LOW ON RESISTANCE

IRF9952PbF
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 — —
P-Ch -30 — —
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.015 —
— 0.015 —
V/°C
Reference to 25°C, I_D = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
—
—
—
—
0.08 0.10
0.12 0.15
0.165 0.250
0.290 0.400
Ω
V_GS = 10V, I_D = 2.2A „
VGS = 4.5V, ID = 1.0A „
V_GS = -10V, I_D = -1.0A „
VGS = -4.5V, ID = -0.50A „
N-Ch 1.0 — —
P-Ch -1.0 — —
V
VDS = VGS, ID = 250µA
V_DS = V_GS, I_D = -250µA
N-Ch — 12 —
P-Ch — 2.4 —
S
VDS = 15V, ID = 3.5A „
V_DS = -15V, I_D = -2.3A
„
N-Ch — — 2.0
VDS = 24V, VGS = 0V
P-Ch —
N-Ch —
—
—
-2.0
25
µA
VDS = -24V, VGS = 0V
V_DS = 24V, V_GS = 0V, T_J = 125°C
P-Ch — — -25
VDS = -24V, VGS = 0V, TJ = 125°C
N-P –– — ±100 nA V_GS = ±20V
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
6.9 14
6.1 12
1.0 2.0
1.7 3.4
1.8 3.5
1.1 2.2
nC
N-Channel
I_D = 1.8A, V_DS = 10V, V_GS = 10V
„
P-Channel
I_D = -2.3A, V_DS = -10V, V_GS = -10V
N-Ch — 6.2 12
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
N-Ch —
P-Ch —
9.7 19
8.8 18
14 28
13 26
20 40
3.0 6.0
6.9 14
ns
N-Channel
V_DD = 10V, I_D = 1.0A, R_G = 6.0Ω,
R_D = 10Ω
„
P-Channel
V_DD = -10V, I_D = -1.0A, R_G = 6.0Ω,
R_D = 10Ω
N-Ch — 190 —
N-Channel
P-Ch — 190 —
V_GS = 0V, V_DS = 15V, ƒ = 1.0MHz
N-Ch — 120 — pF
P-Ch — 110 —
P-Channel
N-Ch — 61 —
V_GS = 0V, V_DS = -15V, ƒ = 1.0MHz
P-Ch — 54 —
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 1.7
I_S
Continuous Source Current (Body Diode)
P-Ch — — -1.3 _A
N-Ch — — 16
I_SM
Pulsed Source Current (Body Diode) 
P-Ch — — 16
V_SD
Diode Forward Voltage
N-Ch — 0.82 1.2
P-Ch — -0.82 -1.2
V
TJ = 25°C, IS = 1.25A, VGS = 0V ƒ
T_J = 25°C, I_S = -1.25A, V_GS = 0V ƒ
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
N-Ch —
P-Ch —
27
27
53
54
ns
N-Channel
T_J = 25°C, I_F =1.25A, di/dt = 100A/µs
N-Ch —
P-Ch —
28
31
57
62
nC
P-Channel
„
T_J = 25°C, I_F = -1.25A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ N-Channel I_SD ≤ 2.0A, di/dt ≤ 100A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel I_SD ≤ -1.3A, di/dt ≤ 84A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
ƒ N-Channel Starting T_J = 25°C, L = 22mH R_G = 25Ω, I_AS = 2.0A. (See Figure 12)
P-Channel Starting T_J = 25°C, L = 67mH R_G = 25Ω, I_AS = -1.3A.
2
www.irf.com