IRF9952PBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – ULTRA LOW ON RESISTANCE

N-Channel
IRF9952PbF
350
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
300
C_rss = C_gd
C_oss = C_ds + C_gd
250
C_iss
200
Coss
150
100
Crss
50
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 1.8A}
16
V_DS = 10V
12
8
4
0
0
2
4
6
8
10
Q_G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
PDM
1 0.01
t₁
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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