IRF7492 Datasheet, PDF (8/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7492
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
NOTES:
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2 . A L L D IM E N S ION S A R E S H O W N IN M ILL IM E TE R S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
330.00
(12.992)
MAX.
NOTES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
14.4 0 ( .566 )
12.4 0 ( .488 )
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting T_J = 25°C, L = 14mH
R_G = 25Ω, I_AS = 4.4A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† I_SD ≤ 2.2A, di/dt ≤ 210A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
TAC Fax: [phone]
Visit us at www.irf.com for sales contact information.06/02
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