IRF7492 Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High frequency DC-DC converters
V_DSS
200V
PD - 94498
IRF7492
HEXFET^® Power MOSFET
R_DS(on) max
I_D
79mΩ@V_GS = 10V 3.7A
Benefits
l Low Gate to Drain Charge to Reduce
S
1
Switching Losses
l Fully Characterized Capacitance Including ^{S 2}
A
A
8
D
7
D
Effective C_OSS to Simplify Design, (See
S
3
6
D
App. Note AN1001)
l Fully Characterized Avalanche Voltage
G
4
5
D
and Current
Top View
SO-8
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
dv/dt
T_J
T_STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
200
± 20
3.7
3.0
30
2.5
0.02
9.5
-55 to + 150
300 (1.6mm from case )
Units
V
V
A
W
W/°C
V/ns
°C
Thermal Resistance
Symbol
R_θJL
R_θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Notes  through † are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
06/27/02