IRF7492 Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF7492
100
90
80
VGS = 10V
70
60
50
40
0
5
10 15 20 25 30
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
V_GS
3mA
D.U.T.
+
-V^DS
V_GS
Q_GS
V_G
I_G
I_D
Current Sampling Resistors
Q_G
Q_GD
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
500
400
300
200
ID = 3.7A
100
0
5 6 7 8 9 10 11 12 13 14 15
VGS, Gate -to -Source Voltage (V)
Fig 13. On-Resistance Vs. Gate Voltage
300
250
 ^TOP
ID
2.0A
3.5A
BOTTOM
4.4A
200
150
V (B R )D SS
tp
IAS
VDS
L
RG
20V
tp
D .U .T
IA _S
0.01Ω
15V
DRIVE R
+
- ^VD D
A
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
100
50
0
25
50
75
100
125
150
Starting Tj, Junction Temperature
( ^° C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
www.irf.com