SI97406 Datasheet, PDF (7/9 Pages) International Rectifier – Generation V Technology

D.U.T
+
‚
-

R_G
V_GS*
IRF7406
Peak Diode Recovery dv/dt Test Circuit
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Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
„
+
**
• dv/dt controlled by R_G
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
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-
V
D
*
D
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[^V_GS^=10V ] ***
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
[^VDD]
Ripple ≤ 5%
[ I_SD ]
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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