SI97406 Datasheet, PDF (4/9 Pages) International Rectifier – Generation V Technology

IRF7406
2500
2000
1500
1000
500
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
Ciss
Coss
Crss
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{I D = -2.8A}
V_DS = -24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
20
40
60
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0.3
VGS = 0V _A
0.6
0.9
1.2
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100us
10
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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