SI97406 Datasheet, PDF (2/9 Pages) International Rectifier – Generation V Technology

IRF7406
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V_(BR)DSS/∆T_J Breakdown Voltage Temp. Coefficient
R_DS(ON)
Static Drain-to-Source On-Resistance
V_GS(th)
g_fs
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
-30 ––– ––– V
––– -0.020 ––– V/°C
––– ––– 0.045
––– ––– 0.070
Ω
-1.0 ––– ––– V
3.1 ––– ––– S
––– ––– -1.0 _µA
––– ––– -25
––– ––– -100 _nA
––– ––– 100
––– ––– 59
––– ––– 5.7 nC
––– ––– 21
––– 16 –––
––– 33 ––– _ns
––– 45 –––
––– 47 –––
––– 2.5 –––
nH
––– 4.0 –––
––– 1100 –––
––– 490 ––– pF
––– 220 –––
Conditions
V_GS = 0V, ID = -250µA
Reference to 25°C, I_D = -1mA
V_GS = -10V, I_D = -2.8A ƒ
V_GS = -4.5V, I_D = -2.4A ƒ
V_DS = V_GS, I_D = -250µA
V_DS = -15V, I_D = -2.8A
V_DS = -24V, V_GS = 0V
V_DS = -24V, V_GS = 0V, T_J = 125°C
V_GS = -20V
V_GS = 20V
I_D = -2.8A
V_DS = -2.4V
V_GS = -10V, See Fig. 6 and 12 ƒ
V_DD = -15V
I_D = -2.8A
R_G = 6.0Ω
R_D = 5.3Ω, See Fig. 10 ƒ
D
Between lead tip
and center of die contact ^G
S
V_GS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -3.1
––– ––– -23
––– ––– -1.0
––– 42 63
––– 64 96
MOSFET symbol
D
showing the
A _{integral reverse}
G
p-n junction diode.
S
V T_J = 25°C, I_S = -2.0A, V_GS = 0V ƒ
ns T_J = 25°C, I_F = -2.8A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ I_SD ≤ -2.8A, di/dt ≤ 90A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
2
„ Surface mounted on FR-4 board, t ≤ 10sec.
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