IRFB4410 Datasheet, PDF (7/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4410/IRFS4410/IRFSL4410
+
‚
-

R_G
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
-
• Low Leakage Inductance
Current Transformer
-^„ +
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
• dv/dt controlled by R_G
• Driver same type as D.U.T.
V_DD
+
• I_SD controlled by Duty Factor "D"
-
• D.U.T. - Device Under Test
Re-Applied
Voltage
Body Diode
IInndduuccttoorr CCuurrerennt t
Forward Drop
Ripple ≤ 5%
* V_GS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET^® Power MOSFETs
* V_GS=10V
V_DD
I_SD
V_(BR)DSS
15V
tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 21a. Unclamped Inductive Test Circuit
I_AS
Fig 21b. Unclamped Inductive Waveforms
L_D
V_DS
+
V_DD -
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 22a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Fig 23a. Gate Charge Test Circuit
www.irf.com
Qgs1 Qgs2 Qgd
Qgodr
Fig 23b. Gate Charge Waveform
7