IRFB4410 Datasheet, PDF (2/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4410/IRFS4410/IRFSL4410
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
I_DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Gate Input Resistance
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.094 ––– V/°C Reference to 25°C, I_D = 1mAd
––– 8.0 10 _mΩ V_GS = 10V, I_D = 58A g
2.0 ––– 4.0 V V_DS = V_GS, I_D = 150µA
––– ––– 20 µA V_DS = 100V, V_GS = 0V
––– ––– 250
V_DS = 100V, V_GS = 0V, T_J = 125°C
––– ––– 200 nA V_GS = 20V
––– ––– -200
V_GS = -20V
––– 1.5 ––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
120 ––– –––
Q_g
Total Gate Charge
––– 120 180
Q_gs
Gate-to-Source Charge
––– 31 –––
Q_gd
Gate-to-Drain ("Miller") Charge
––– 44 –––
t_d(on)
Turn-On Delay Time
––– 24 –––
t_r
Rise Time
––– 80 –––
t_d(off)
Turn-Off Delay Time
––– 55 –––
t_f
Fall Time
––– 50 –––
C_iss
Input Capacitance
––– 5150 –––
C_oss
Output Capacitance
––– 360 –––
C_rss
Reverse Transfer Capacitance
––– 190 –––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)} ––– 420 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)h} ––– 500 –––
S V_DS = 50V, I_D = 58A
nC I_D = 58A
V_DS = 80V
V_GS = 10V g
ns V_DD = 65V
I_D = 58A
R_G = 4.1Ω
V_GS = 10V g
pF V_GS = 0V
V_DS = 50V
ƒ = 1.0MHz
V_GS = 0V, V_DS = 0V to 80V i, See Fig.11
V_GS = 0V, V_DS = 0V to 80V h, See Fig. 5
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) d
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 96c A MOSFET symbol
D
showing the
––– ––– 380 A integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 58A, V_GS = 0V g
––– 38 56 ns T_J = 25°C
V_R = 85V,
––– 51 77
T_J = 125°C
––– 61 92 nC T_J = 25°C
I_F = 58A
di/dt = 100A/µs g
––– 110 170
T_J = 125°C
––– 2.8 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
temperature. Package limitation current is 75A.
as C_oss while V_DS is rising from 0 to 80% V_DSS.
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.14mH
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
R_G = 25Ω, I_AS = 58A, V_GS =10V. Part not recommended for use
footprint and soldering techniques refer to application note #AN-994.
above this value.
‰ R_θ is measured at T_J approximately 90°C.
„ I_SD ≤ 58A, di/dt ≤ 650A/µs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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