IRFB4410 Datasheet, PDF (6/11 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4410/IRFS4410/IRFSL4410
5.0
4.5
4.0
3.5
3.0
ID = 150µA
2.5 _{ID = 250µA}
2.0
ID = 1.0mA
ID = 1.0A
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
20
15
10
5
IF = 38A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 18 - Typical Recovery Current vs. di_f/dt
20
15
10
5
IF = 19A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 17 - Typical Recovery Current vs. di_f/dt
400
350
300
250
200
150
100
50
IF = 19A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 19 - Typical Stored Charge vs. di_f/dt
400
350
300
250
200
150
100
50
IF = 38A
VR = 85V
TJ = 25°C _____
TJ = 125°C ----------
0
100 200 300 400 500 600 700 800 900 1000
dif/dt (A/µs)
Fig. 20 - Typical Stored Charge vs. di_f/dt
6
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