IRF9952 Datasheet, PDF (7/10 Pages) International Rectifier – Power MOSFET(Vdss=+-30V)

P-Channel
IRF9952
2.0 _{ID = -1.0A}
1.5
1.0
0.5
V_GS = -10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 16. Normalized On-Resistance
Vs. Temperature
2.5
2.0
1.5
V_GS = -4.5V
1.0
0.5
0.0
0.0
VGS = -10V
A
1.0
2.0
3.0
4.0
5.0
-I D , D rain C urrent (A )
Fig 17. Typical On-Resistance Vs. Drain
Current
0.80
0.60
0.40
I D = -2. 3A
0.20
0.00
0
A
3
6
9
12
15
-V _{G S} , G ate -to-S ource V oltage ( V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
150
ID
TOP -0.58A
-1.0A
120
BOTTOM -1.3A
90
60
30
0
25
50
75
100
125
150
Starting TJ, Junction Temperature ( ^°C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current