IRF9952 Datasheet, PDF (5/10 Pages) International Rectifier – Power MOSFET(Vdss=+-30V)

N-Channel
IRF9952
350
VGS = 0V,
f = 1MHz
C _{is s} = C _gs + C _gd , C_ds SH O RTE D
300
C_rss = C _gd
Co ss = Cds + C g d
250
C is s
200
C oss
150
100
C rss
50
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = 1.8A
16
V_DS = 10V
12
8
4
0
0
2
4
6
8
10
Q_G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
P_DM
1 0.01
t₁
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t ₁/ t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient