IRF9952 Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=+-30V)

PD - 9.1561A
PRELIMINARY
IRF9952
HEXFET^® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
N -C HA NN EL MOSF ET
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
P -CH AN N EL M OSF ET
T o p V iew
N-Ch P-Ch
V_DSS 30V -30V
R_DS(on) 0.10Ω 0.25Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Recommended upgrade: IRF7309 or IRF7319
Lower profile/smaller equivalent: IRF7509
S O -8
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
T_A = 25°C
T_A = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
T_A = 25°C
T_A = 70°C
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
Symbol
V _DS
V_GS
I_D
I_DM
I_S
P_D
E_AS
I_AR
E_AR
dv/dt
T_J, T_STG
Maximum
N-Channel P-Channel
30
± 20
3.5
-2.3
2.8
-1.8
16
-10
1.7
-1.3
2.0
1.3
44
57
2.0
-1.3
0.25
5.0
-5.0
-55 to + 150 °C
Units
V
A
W
mJ
A
mJ
V/ ns
Symbol
R_θJA
Limit
62.5
Units
°C/W
8/25/97