IRF9910PBF Datasheet, PDF (7/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRF9910PbF
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
R_1R1
R_2R2
R_3R3
τ_{J τJ}
τ_{1 τ1}
τ_{2 τ2}
τ_{3 τ3}
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
Ci= i/Ri
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R_4R4
τ_Cτ
Ri (°C/W)
1.688
14.468
τi (sec)
0.000230
0.105807
τ_{4 τ4}
30.264 1.001500
16.106 29.90000
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1
10
100
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Current Regulator
Same Type as D.U.T.
V(BR)DSS
15V
tp
VDS
L
RG
2V0GVS
tp
D.U.T
I_AS
0.01Ω
DRIVER
+
- ^VDD
A
I _AS
Fig 26. Unclamped Inductive Test Circuit
and Waveform
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 27. Gate Charge Test Circuit
L_D
V_DS
+
V_DD -
V_DS
90%
V_GS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 28. Switching Time Test Circuit
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10%
V_GS
t_{d(on) tr}
t_{d(off) tf}
Fig 29. Switching Time Waveforms
7