IRF9910PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET®Power MOSFET

PD - 95728
IRF9910PbF
Applications
l Dual SO-8 MOSFET for POL
converters in desktop, servers,
graphics cards, game consoles
and set-top box
l Lead-Free
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
I_D
: 20V Q1 13.4m @V_GS = 10V 10A
: Q2 9.3m @V_GS = 10V 12A
Benefits
l Very Low R_DS(on) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
S2 1
G2 2
S1 3
l 20V V_GS Max. Gate Rating
G1 4
8 D2
7 D2
6 D1
5 D1
SO-8
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJL
Junction-to-Drain Lead
R_θJA
fg Junction-to-Ambient
Q1 Max.
Q2 Max.
20
± 20
10
12
8.3
9.9
83
98
2.0
1.3
0.016
-55 to + 150
Units
V
A
W
W/°C
°C
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
Notes  through … are on page 10
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1
8/11/04