IRF9910PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET®Power MOSFET

IRF9910PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
BV_DSS
∆ Β V _DSS/∆T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
R DS(on)
Static Drain-to-Source On-Resistance
Q2
V GS(th )
∆ V _{GS(t h)}/∆T_J
IDSS
I_GSS
gfs
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Qg
Total Gate Charge
Q_gs1
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
Q_godr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd)
Q_oss
Output Charge
t_d(on)
Turn-On Delay Time
tr
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
C iss
Input Capacitance
C_oss
Output Capacitance
C _rss
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
E_AS
IAR
d Single Pulse Avalanche Energy
™ Avalanche Current
Diode Characteristics
Param eter
IS
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
2
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
20
–––
–––
–––
–––
–––
–––
1.65
–––
–––
–––
–––
–––
–––
19
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.0061
0.014
10.7
14.6
7.4
9.1
–––
-4.9
-5.0
–––
–––
–––
–––
–––
–––
7.4
15
2.6
4.3
0.85
1.4
2.5
5.4
1.5
3.9
3.4
6.8
4.0
8.7
6.3
8.3
10
14
9.2
15
4.5
7.5
900
1860
290
600
140
310
Typ.
–––
–––
–––
–––
–––
11
16
3.1
4.9
Max.
–––
–––
–––
13.4
18.3
9.3
11.3
2.55
–––
–––
1.0
100
100
-100
–––
–––
11
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Max.
2.5
83
98
1.0
1.0
17
24
4.7
7.3
Units
V
V/°C
C ondi ti ons
V_GS = 0V, I_D = 250µA
Reference to 25°C, ID = 1mA
mΩ
V
mV/°C
e V_GS = 10V, I_D = 10A
e V_GS = 4.5V, I_D = 8.3A
e V_GS = 10V, I_D = 12A
e V_GS = 4.5V, I_D = 9.8A
VDS = VGS, ID = 250µA
µA VDS = 16V, VGS = 0V
V_DS = 16V, V_GS = 0V, T_J = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 8.3A
V_DS = 10V, I_D = 9.8A
Q1
VDS = 10V
nC VGS = 4.5V, ID = 8.3A
Q2
VDS = 10V
V_GS = 4.5V, I_D = 9.8A
nC VDS = 10V, VGS = 0V
Q1
VDD = 16V, VGS = 4.5V
ID = 8.3A
ns
Q2
VDD = 16V, VGS = 4.5V
I_D = 9.8A
Clamped Inductive Load
V_GS = 0V
pF VDS = 10V
ƒ = 1.0MHz
Q1 Max.
33
8.3
Q2 Max.
26
9.8
Units
mJ
A
Units
A
A
V
ns
nC
C ondi ti ons
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
e T_J = 25°C, I_S = 8.3A, V_GS = 0V
e T_J = 25°C, I_S = 9.8A, V_GS = 0V
e Q1 TJ = 25°C, IF = 8.3A,
V_DD = 10V, di/dt = 100A/µs
e Q2 TJ = 25°C, IF = 9.8A,
VDD = 10V, di/dt = 100A/µs
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