IRF7820TRPBF Datasheet, PDF (7/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7820PbF
Id
Vgs
L
VCC
DUT
0
210K
S
Vds
Vgs(th)
Qgodr
Qgd Qgs2 Qgs1
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
+
‚
-

R_G
ƒ
Circuit Layout Considerations
 Low Stray Inductance
Ground Plane
-
Low Leakage Inductance
Current Transformer
D.U.T. I_SD Waveform
Reverse
-^„ +
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform
Diode Recovery
dv/dt
*
dv/dt controlled by R_G
Driver same type as D.U.T.
V_DD
Re-Applied
** ^{+ Voltage}
Body Diode Forward Drop
I_SD controlled by Duty Factor "D"
-
D.U.T. - Device Under Test
Inductor Curent
Ripple  5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** V_GS = 5V for Logic Level Devices
V^*_G^*_S^*=10V
V_DD
I_SD
Fig 17. Diode Reverse Recovery Test Circuit for HEXFET^® Power MOSFETs
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