IRF7820TRPBF Datasheet, PDF (4/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7820PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = C _gd
Coss = Cds + Cgd
Ciss
Coss
14.0
ID= 2.2A
12.0
VDS= 160V
10.0
VDS= 100V
VDS= 40V
8.0
6.0
100
Crss
4.0
2.0
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
0.0
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.3
VGS = 0V
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
1msec
10msec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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