IRF7820TRPBF Datasheet, PDF (2/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power

IRF7820PbF
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ.
BVDSS
 V_DSS/ T_J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
200 –––
––– 0.23
RDS(on)
VGS(th)
 V_GS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– 62.5
3.0 4.0
––– -12
––– –––
––– –––
IGSS
Gate-to-Source Forward Leakage
––– –––
Gate-to-Source Reverse Leakage
––– –––
gfs
Forward Transconductance
5.0 –––
Qg
Qgs1
Qgs2
Qgs
Qgd
Q godr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– 29
––– 8.6
––– 1.5
––– 10.1
––– 8.7
––– 10.2
––– 10.2
––– 30
––– 0.73
––– 7.1
––– 3.2
––– 14
––– 12
Ciss
Input Capacitance
––– 1750
Cos s
Output Capacitance
––– 90
Crs s
Reverse Transfer Capacitance
––– 25
Avalanche Characteristics
EAS
IAR
d ^Parameter
Single Pulse Avalanche Energy
™ Avalanche Current
Diode Characteristics
Parameter
Min. Typ.
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
––– –––
––– –––
––– –––
––– 33
––– 213
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
e ^{––– V/°C Reference to 25°C, ID = 1mA}
78 m VGS = 10V, ID = 2.2A
5.0 V
––– mV/°C ^{VDS = VGS, ID = 100μA}
20
μA ^{VDS = 200V, VGS = 0V}
250
VDS = 200V, VGS = 0V, TJ = 125°C
100
-100
–––
44
nA ^{VGS = 20V}
VGS = -20V
S VDS = 50V, ID = 2.2A
–––
VDS = 100V
–––
VGS = 10V
––– nC ID = 2.2A
–––
See Figs. 6, 16a & 16b
–––
–––
––– nC VDS = 20V, VGS = 0V
––– 
–––
e V_DD = 200V, V_GS = 10V
––– _ns ID = 2.2A
–––
RG = 1.8
–––
See Figs. 15a & 15b
–––
VGS = 0V
––– pF VDS = 100V
–––
ƒ = 1.0MHz
Typ.
–––
–––
Max.
606
2.8
Units
mJ
A
Max. Units
Conditions
MOSFET symbol
1.5
A ^{showing the}
integral reverse
29
1.3
e ^{p-n junction diode.}
V T_J = 25°C, I_S = 2.2A, V_GS = 0V
50
320
e ^{ns TJ = 25°C, IF = 2.2A, VDD = 100V}
nC di/dt = 500A/μs
2
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