AUIRF1324 Datasheet, PDF (7/11 Pages) International Rectifier – HEXFET

Power MOSFET

AUIRF1324
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
250
ID = 195A
200
150
100
50
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T_jmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT_jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P_{D (ave)} = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I_av = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed T_jmax (assumed as
25°C in Figure 14, 15).
t_{av =} Average time in avalanche.
D = Duty cycle in avalanche = t_av ·f
Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)
P_{D (ave)} = 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC
I_av = 2DT/ [1.3·BV·Z_th]
E_{AS (AR)} = P_{D (ave)}·t_av
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5
4.0
3.5
3.0
2.5
ID = 250µA
ID = 1.0mA
2.0 ^{ID = 1.0A}
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 16. Threshold Voltage vs. Temperature
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