AUIRF1324 Datasheet, PDF (5/11 Pages) International Rectifier – HEXFET

Power MOSFET

1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0
0.5
1.0
1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
400
350
Limited By Package
300
250
200
150
100
50
0
25 50 75 100 125 150 175
Fig 9. ^TM^C a^, x^Ci^am^seum^TemD^pr^ea^ri^an^tuC^reu⁽r^°r^Ce⁾nt vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
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AUIRF1324
10000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse DC
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
32
Id = 5mA
30
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 44A
83A
BOTTOM 195A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
5