AUIRF1324 Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET

Power MOSFET

AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast switch-
ing speed and improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
D
S
G
Gate
PD - 97482
AUIRF1324
HEXFET^® Power MOSFET
V_DSS
R_DS(on)
typ.
max.
I_{D (Silicon Limited)}
I_{D (Package Limited)}
24V
1.2m:
1.5m:
c 353A
195A
DS
G
TO-220AB
AUIRF1324
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Max.
353 ™
249 ™
195
1412
300
2.0
Units
A
W
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
e Single Pulse Avalanche Energy (Thermally Limited)
Ãd Avalanche Current
e Repetitive Avalanche Energy
f Peak Diode Recovery
± 20
270
See Fig. 14, 15, 22a, 22b
0.46
V
mJ
A
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
300
x x 10lb in (1.1N m)
Thermal Resistance
Symbol
R_θJC
R_θCS
R_θJA
Parameter
j Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
03/29/2010