IRFPS35N50L Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFPS35N50L
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 12. Maximum Safe Operating Area
1200
1000
800
ID
TOP
15A
22A
BOTTOM 34A
600
400
200
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 13. Maximum Avalanche Energy
Vs. Drain Current
15V
VDS
L
DRIVER
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 14a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
+
D.U.T. -V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
6
V_(BR)DSS
tp
I_AS
Fig 14b. Unclamped Inductive Waveforms
Q_G
V_GS
Q_GS
Q_GD
V_G
Charge
Fig 15b. Basic Gate Charge Waveform
www.irf.com