IRFPS35N50L Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFPS35N50L
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
500 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.12 ––– V/°C Reference to 25°C, I_D = 1mA
f ––– 0.125 0.145 Ω V_GS = 10V, I_D = 20A
3.0 ––– 5.0
V V_DS = V_GS, I_D = 250µA
––– ––– 50 µA V_DS = 500V, V_GS = 0V
––– ––– 2.0 mA VDS = 400V, VGS = 0V, TJ = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 nA V_GS = 30V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -30V
R_G
Internal Gate Resistance
––– 1.1 ––– Ω f = 1MHz, open drain
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
18 ––– ––– S V_DS = 50V, I_D = 20A
Q_g
Total Gate Charge
––– ––– 230
I_D = 34A
Qgs
Gate-to-Source Charge
––– ––– 65 nC V_DS = 400V
Q_gd
Gate-to-Drain ("Miller") Charge
––– ––– 110
f V_GS = 10V, See Fig. 7 & 15
t_d(on)
Turn-On Delay Time
––– 24 –––
V_DD = 250V
t_r
Rise Time
––– 100 ––– ns I_D = 34A
t_d(off)
t_f
Turn-Off Delay Time
Fall Time
––– 42 –––
––– 42 –––
R_G = 1.2Ω
f V_GS = 10V, See Fig. 10a & 10b
C_iss
Input Capacitance
––– 5580 –––
V_GS = 0V
Coss
Output Capacitance
––– 590 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 58 ––– pF ƒ = 1.0MHz, See Fig. 5
C_oss
Output Capacitance
––– 7290 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
C_oss
C_oss eff.
C_oss eff. (ER)
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
––– 160 –––
––– 320 –––
––– 220 –––
V_GS = 0V, V_DS = 400V, ƒ = 1.0MHz
g V_GS = 0V,V_DS = 0V to 400V
(Energy Related)
Avalanche Characteristics
Symbol
E_AS
IAR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
Ù Avalanche Current
™ Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
560
34
45
Units
mJ
A
mJ
Thermal Resistance
h ^Symbol
Parameter
R_θJC
Junction-to-Case
Typ.
–––
Max.
0.28
Units
R_θCS
R_θJA
h ^{Case-to-Sink, Flat, Greased Surface}
Junction-to-Ambient
0.24
–––
–––
°C/W
40
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting T_J = 25°C, L = 0.97mH, R_G =25Ω,
I_AS = 34A (See Figure 13)
ƒ I_SD ≤ 34A, di/dt ≤ 765A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C.
2
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
C_oss eff.(ER) is a fixed capacitance that stores the same energy
as C_oss while V_DS is rising from 0 to 80% V_DSS.
† R_θ is measured at T_J approximately 90°C
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