IRFPS35N50L Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFPS35N50L
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
100
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
30
25
20
15
10
5
0
0 100 200 300 400 500 600
VDS, Drain-to-Source Voltage (V)
Fig 6. Typ. Output Capacitance
Stored Energy vs. V_DS
20
ID = 34A
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80 120 160 200 240
Q_G , Total Gate Charge (nC)
Fig 7. Typical Gate Charge Vs.
Gate-to-Source Voltage
4
1000
100
T_J = 150° C
10
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD ,Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode
Forward Voltage
www.irf.com