IRFP27N60KPBF Datasheet, PDF (6/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFP27N60KPbF
950
ID
TOP
13A
18A
760
BOTTOM
28A
15V
570
VDS
L
DRIVER
380
190
0
25
50
75
100
125
150
Starting Tj, Junction Temperature ( ^° C)
Fig 12a. Maximum Avalanche Energy
Vs. Drain Current
RG
20V
tp
D.U.T
I_AS
0.01Ω
+
- ^VDD
A
Fig 12c. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
Current Regulator
Same Type as D.U.T.
50KΩ
12V
.2µF
.3µF
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13a. Gate Charge Test Circuit
6
I_AS
Fig 12d. Unclamped Inductive Waveforms
Q_G
V_GS
Q_GS
Q_GD
V_G
Charge
Fig 13b. Basic Gate Charge Waveform
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