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IRFP27N60KPBF Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFP27N60KPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
600 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.64 âââ V/°C Reference to 25°C, ID = 1mA
âââ 180 220 m⦠VGS = 10V, ID = 16A Â
3.0 âââ 5.0 V VDS = VGS, ID = 250µA
âââ âââ 50
âââ âââ 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
14 âââ âââ S VDS = 50V, ID = 16A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
âââ âââ 180
ID = 27A
âââ âââ 56 nC VDS = 480V
âââ âââ 86
VGS = 10V, See Fig. 6 and 13 Â
âââ 27 âââ
VDD = 300V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
âââ 110 âââ ns ID = 27A
âââ 43 âââ
RG = 4.3â¦
âââ 38 âââ
VGS = 10V,See Fig. 10 Â
âââ 4660 âââ
VGS = 0V
Coss
Crss
Coss
Coss
Coss eff.
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 460 âââ
âââ 41 âââ
âââ 5490 âââ
âââ 120 âââ
âââ 250 âââ
VDS = 25V
pF Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 27
A showing the
integral reverse
G
âââ âââ 110
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 27A, VGS = 0V Â
âââ 620 920 ns TJ = 25°C, IF = 27A
âââ 11 16 µC di/dt = 100A/µs Â
âââ 36 53 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
 Starting TJ = 25°C, L = 1.4mH, RG = 25â¦,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
 ISD ⤠27A, di/dt ⤠390A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
2
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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