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IRFP27N60KPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET | |||
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SMPS MOSFET
PD - 95479A
IRFP27N60KPbF
Applications
l Hard Switching Primary or PFC Switch
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Motor Drive
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
HEXFET® Power MOSFET
VDSS RDS(on) typ.
ID
600V
180mâ¦
27A
TO-247AC
Max.
27
18
110
500
4.0
± 30
13
-55 to + 150
300
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche EnergyÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Typ.
âââ
âââ
âââ
Max.
530
27
50
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
âââ
0.24
âââ
Max.
0.29
âââ
40
Units
°C/W
1
09/26/05
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